eGaN FET's Characteristics

eGan® FET's Characteristics

EPC

This tutorial covers the operation of EPC’s enhancement mode gallium nitride transistors.  To explain the eGaN devices’ ease-of-use, it is necessary to first understand how the device operates and highlight both the similarities and differences versus current power MOSFETs.

Related Parts

画像メーカー品番商品概要機能組み込み製品使用IC/部品入手可能な数量価格詳細を表示
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015ハーフHブリッジドライバ（外部FET）なしEPC20150 - 即時$14,314.85詳細を表示
EVAL BOARD FOR EPC2001EPC9017EVAL BOARD FOR EPC2001ハーフHブリッジドライバ（外部FET）なしEPC20010 - 即時$18,887.68詳細を表示
EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007ハーフHブリッジドライバ（外部FET）なしEPC80070 - 即時$22,864.03詳細を表示
EVAL BOARD FOR EPC2001EPC9002EVAL BOARD FOR EPC2001ハーフHブリッジドライバ（外部FET）なしEPC20010 - 即時$14,314.85詳細を表示
PTM Published on: 2010-10-06

Related Articles and Blogs

DigiKeyで入手可能なGaN電源製品とリソース 電源設計においてGaN（窒化ガリウム）の浸透が進んでいます。このブログでは、その背景の一部と、DigiKeyで入手可能なGaN関連製品とリソースについて説明します。
High-Step-Down-Ratio Buck Converters for Intermediate Bus Architectures Solutions for the design challenges of high-step-down-ratio DC/DC buck converters including Silicon & eGan FETs.

Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Driving eGaN® Power Transistors EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
eGaN® Basics The basics of EPC’s enhancement mode gallium nitride (eGaN) transistors.