eGaN Basics

eGaN® Basics

EPC

This tutorial covers the basics of EPC’s enhancement mode gallium nitride (eGaN®) transistors. EPC’s eGaN® transistors give the design engineer a whole new spectrum of performance compared with silicon power MOSFETs. These advantages can be applied to gain efficiency advantages, size advantages, or a combination of both.

Related Parts

画像メーカー品番商品概要機能組み込み製品使用IC/部品入手可能な数量料金詳細を表示
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015ハーフHブリッジドライバ（外部FET）なしEPC20150 - 即時$14,956.70詳細を表示
EVAL BOARD FOR EPC2001EPC9017EVAL BOARD FOR EPC2001ハーフHブリッジドライバ（外部FET）なしEPC20010 - 即時$19,734.55詳細を表示
EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007ハーフHブリッジドライバ（外部FET）なしEPC80070 - 即時$23,889.18詳細を表示
EVAL BOARD FOR EPC2001EPC9002EVAL BOARD FOR EPC2001ハーフHブリッジドライバ（外部FET）なしEPC20010 - 即時$14,956.70詳細を表示
PTM Published on: 2010-09-27

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Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Driving eGaN® Power Transistors EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
eGan® FET's Characteristics The operation of EPC’s enhancement mode gallium nitride transistors.
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