Nexperia- e-mode GaN FETs | First Look

Nexperia's e-mode GaN FETs are designed for low- or high-power conversion applications, offering enhanced power system flexibility. These FETs provide superior switching performance with very low QC and QOSS values, boosting efficiency in 650 V AC/DC and DC/AC power conversion. They also bring substantial space and bill of materials savings in applications like BLDC and micro servo motor drives, as well as LED drivers. The lineup comprises five e-mode GaN FETs with 650 V ratings, offering RDS(ON) values ranging from 80 mΩ to 190 mΩ, in a choice of DFN 5x6 mm and DFN 8x8 mm packages. The range also offers a 100 V, 3.2 mΩ GaN FET in a WLCSP8 package and a 150 V, 7 mΩ device in a FCLGA package. Featuring ultra-high-frequency switching, no reverse-recovery charge, low gate charge, low output charge, and high performance at more than 99% efficiency. Qualified for industrial applications according to JEDEC standards. Nexperia’s GaN FETs deliver the fastest transition / switching capability, with highest dv/dt and di/dt, and best power efficiency. Bringing enhanced power density through reduced conduction and switching losses across various applications, including datacom/telecom, consumer charging, solar, and industrial fields.