The Vishay MGDT planar gate drive transformer delivers MOSFET/IGBT gate power and timing signals simultaneously. The transformer directly drives high side MOSFETs/IGBTs on buses up to 1200 V. The dielectric withstand voltage of 3750 V_AC from drive to gate offers high isolation protection. Total power dissipation is only 2 W. Operating frequencies range from 100 kHz to 500 kHz. The planar winding provides minimal leakage inductance and interwinding capacitance parasitic losses. Operating temperature range is -55°C to +125°C with power derating above 25°C. The MGDT transformers are suitable for industrial, military, aerospace and medical applications.