N-Channel 1200 V 39A 223W (Tc) Through Hole TO-247-4
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SICW080N120Y4-BP

DigiKey Part Number
353-SICW080N120Y4-BP-ND
Manufacturer
MCC (Micro Commercial Components)
Manufacturer Product Number
SICW080N120Y4-BP
Description
N-CHANNEL MOSFET,TO-247-4
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 39A 223W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
MCC (Micro Commercial Components)
Series
-
Packaging
Bulk
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
39A
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
85mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
3.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 18 V
Vgs (Max)
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
223W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Base Product Number
SICW080
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Quantity
All prices are in JPY
Bulk
QuantityUnit PriceExt Price
1¥3,176.00000¥3,176
10¥2,259.00000¥22,590
360¥1,624.03056¥584,651
Manufacturers Standard Package
Unit Price without JCT:¥3,176.00000
Unit Price with JCT:¥3,493.60000