SiCFET (Silicon Carbide) Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Gate Charge (Qg) (Max) @ Vgs
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Input Capacitance (Ciss) (Max) @ Vds
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PG-TO263-7
IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7
Infineon Technologies
1,447
In Stock
1 : ¥810.00000
Cut Tape (CT)
1,000 : ¥307.89600
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.2A (Tc)
12V, 15V
1000mOhm @ 1A, 15V
5.7V @ 1.1mA
5 nC @ 12 V
5 nC @ 12 V
-
+20V, -10V
275 pF @ 1000 V
275 pF @ 1000 V
-
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
1,127
In Stock
1 : ¥826.00000
Cut Tape (CT)
1,000 : ¥303.57200
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
8.1A (Tc)
15V, 18V
233.9mOhm @ 3A, 18V
5.1V @ 900µA
7.9 nC @ 18 V
7.9 nC @ 18 V
-
+20V, -7V
290 pF @ 800 V
290 pF @ 800 V
-
-
80W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
GeneSiC Semiconductor
6,597
In Stock
1 : ¥892.00000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
5.5V @ 500µA
11 nC @ 20 V
11 nC @ 20 V
-
+25V, -10V
111 pF @ 1000 V
111 pF @ 1000 V
-
-
44W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PG-TO263-7-12
IMBG120R350M1HXTMA1
SICFET N-CH 1.2KV 4.7A TO263
Infineon Technologies
1,219
In Stock
1 : ¥897.00000
Cut Tape (CT)
1,000 : ¥338.38700
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
4.7A (Tc)
-
468mOhm @ 2A, 18V
5.7V @ 1mA
5.9 nC @ 18 V
5.9 nC @ 18 V
-
+18V, -15V
196 pF @ 800 V
196 pF @ 800 V
-
-
65W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7
IMBF170R650M1XTMA1
SICFET N-CH 1700V 7.4A TO263-7
Infineon Technologies
1,692
In Stock
1 : ¥936.00000
Cut Tape (CT)
1,000 : ¥373.25500
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7.4A (Tc)
12V, 15V
650mOhm @ 1.5A, 15V
5.7V @ 1.7mA
8 nC @ 12 V
8 nC @ 12 V
-
+20V, -10V
422 pF @ 1000 V
422 pF @ 1000 V
-
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G3R160MT12D
SIC MOSFET N-CH 22A TO247-3
GeneSiC Semiconductor
2,918
In Stock
1 : ¥1,069.00000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
15V
192mOhm @ 10A, 15V
2.69V @ 5mA
28 nC @ 15 V
28 nC @ 15 V
-
±15V
730 pF @ 800 V
730 pF @ 800 V
-
-
123W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
609
In Stock
1 : ¥1,088.00000
Cut Tape (CT)
2,000 : ¥456.58650
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
PG-TO263-7
IMBF170R450M1XTMA1
SICFET N-CH 1700V 9.8A TO263-7
Infineon Technologies
1,004
In Stock
1 : ¥1,111.00000
Cut Tape (CT)
1,000 : ¥469.33100
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9.8A (Tc)
12V, 15V
450mOhm @ 2A, 15V
5.7V @ 2.5mA
11 nC @ 12 V
11 nC @ 12 V
-
+20V, -10V
610 pF @ 1000 V
610 pF @ 1000 V
-
-
107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT2xxxNYTB
SCT2750NYTB
SICFET N-CH 1700V 5.9A TO268
Rohm Semiconductor
1,144
In Stock
1 : ¥1,142.00000
Cut Tape (CT)
400 : ¥574.30250
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.9A (Tc)
18V
975mOhm @ 1.7A, 18V
4V @ 630µA
17 nC @ 18 V
17 nC @ 18 V
-
+22V, -6V
275 pF @ 800 V
275 pF @ 800 V
-
-
57W (Tc)
175°C (TJ)
-
-
Surface Mount
TO-268
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
SCT2450KEGC11
SCT3160KLGC11
SICFET N-CH 1200V 17A TO247N
Rohm Semiconductor
2,098
In Stock
1 : ¥1,144.00000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
18V
208mOhm @ 5A, 18V
5.6V @ 2.5mA
42 nC @ 18 V
42 nC @ 18 V
-
+22V, -4V
398 pF @ 800 V
398 pF @ 800 V
-
-
103W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-247-3
G3R450MT17D
SIC MOSFET N-CH 9A TO247-3
GeneSiC Semiconductor
2,540
In Stock
1 : ¥1,182.00000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
18 nC @ 15 V
-
±15V
454 pF @ 1000 V
454 pF @ 1000 V
-
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-263-8
G3R160MT12J-TR
1200V 160M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
521
In Stock
1 : ¥1,190.00000
Cut Tape (CT)
800 : ¥893.34125
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
19A (Tc)
15V, 18V
180mOhm @ 10A, 18V
2.7V @ 5mA
23 nC @ 15 V
23 nC @ 15 V
-
+22V, -10V
724 pF @ 800 V
724 pF @ 800 V
-
-
110W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-12
IMBG120R140M1HXTMA1
SICFET N-CH 1.2KV 18A TO263
Infineon Technologies
751
In Stock
1 : ¥1,208.00000
Cut Tape (CT)
1,000 : ¥504.12200
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
18A (Tc)
-
189mOhm @ 6A, 18V
5.7V @ 2.5mA
13.4 nC @ 18 V
13.4 nC @ 18 V
-
+18V, -15V
491 pF @ 800 V
491 pF @ 800 V
-
-
107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT2450KEGC11
SCT3120ALGC11
SICFET N-CH 650V 21A TO247N
Rohm Semiconductor
4,936
In Stock
1 : ¥1,210.00000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
21A (Tc)
18V
156mOhm @ 6.7A, 18V
5.6V @ 3.33mA
38 nC @ 18 V
38 nC @ 18 V
-
+22V, -4V
460 pF @ 500 V
460 pF @ 500 V
-
-
103W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-263-8
G3R450MT17J-TR
1700V 450M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
1,504
In Stock
1 : ¥1,318.00000
Cut Tape (CT)
800 : ¥996.61000
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
8A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
18 nC @ 15 V
-
+15V, -5V
454 pF @ 1000 V
454 pF @ 1000 V
-
-
71W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C2D10120D
C3M0350120D
SICFET N-CH 1200V 7.6A TO247-3
Wolfspeed, Inc.
1,355
In Stock
1 : ¥1,431.00000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
7.6A (Tc)
15V
455mOhm @ 3.6A, 15V
3.6V @ 1mA
19 nC @ 15 V
19 nC @ 15 V
-
+15V, -4V
345 pF @ 1000 V
345 pF @ 1000 V
-
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0280090J-TR
C3M0280090J-TR
SICFET N-CH 900V 11A D2PAK-7
Wolfspeed, Inc.
7,059
In Stock
1 : ¥1,505.00000
Cut Tape (CT)
800 : ¥674.10250
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
SiCFET (Silicon Carbide)
900 V
11A (Tc)
15V
360mOhm @ 7.5A, 15V
3.5V @ 1.2mA
9.5 nC @ 15 V
9.5 nC @ 15 V
-
+18V, -8V
150 pF @ 600 V
150 pF @ 600 V
-
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPW65R099CFD7AXKSA1
IMW65R048M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
504
In Stock
1 : ¥1,588.00000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
64mOhm @ 20.1A, 18V
5.7V @ 6mA
33 nC @ 18 V
33 nC @ 18 V
-
+23V, -5V
1118 pF @ 400 V
1118 pF @ 400 V
-
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
IPW65R099CFD7AXKSA1
IMW120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-3
Infineon Technologies
643
In Stock
1 : ¥1,644.00000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
31 nC @ 18 V
-
+23V, -7V
1060 pF @ 800 V
1060 pF @ 800 V
-
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
230
In Stock
1 : ¥1,657.00000
Cut Tape (CT)
1,000 : ¥765.03500
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A
-
-
-
-
-
-
-
-
-
-
-
-
-55°C ~ 175°C
Automotive
AEC-Q101
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G3R75MT12D
SIC MOSFET N-CH 41A TO247-3
GeneSiC Semiconductor
2,280
In Stock
1 : ¥1,721.00000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
54 nC @ 15 V
-
+22V, -10V
1560 pF @ 800 V
1560 pF @ 800 V
-
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PG-TO247-4-1
IMZ120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-4
Infineon Technologies
322
In Stock
1 : ¥1,723.00000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
31 nC @ 18 V
-
+23V, -7V
1060 pF @ 800 V
1060 pF @ 800 V
-
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
TO-247-4 Top
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
1,079
In Stock
1 : ¥1,765.00000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
54 nC @ 15 V
-
+22V, -10V
1560 pF @ 800 V
1560 pF @ 800 V
-
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3
NTHL040N120M3S
SIC MOS TO247-3L 40MOHM 1200V M3
onsemi
3,194
In Stock
103,950
Factory
1 : ¥1,805.00000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
54A (Tc)
18V
54mOhm @ 20A, 18V
4.4V @ 10mA
75 nC @ 18 V
75 nC @ 18 V
-
+22V, -10V
1700 pF @ 800 V
1700 pF @ 800 V
-
-
231W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-263-8
G3R75MT12J-TR
1200V 75M TO-263-7 G3R SIC MOSFE
GeneSiC Semiconductor
5,402
In Stock
1 : ¥1,808.00000
Cut Tape (CT)
800 : ¥1,367.05750
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
38A (Tc)
15V, 18V
85mOhm @ 20A, 18V
2.7V @ 10mA
47 nC @ 15 V
47 nC @ 15 V
-
+22V, -10V
1545 pF @ 800 V
1545 pF @ 800 V
-
-
196W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 964

SiCFET (Silicon Carbide) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.