Name: IXSJ80N120R1
Brand: IXYS
SKU: 238-IXSJ80N120R1-ND
Price: 6432.8 JPY
Availability: InStock

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IXSJ80N120R1
DigiKey Part Number	238-IXSJ80N120R1-ND
Manufacturer	IXYS
Manufacturer Product Number	IXSJ80N120R1
Description	1200V 18M (30A @ 25C) SIC MOSFET
Manufacturer Standard Lead Time	35 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 85A (Tc) 266W Through Hole ISO247-3L
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4.8V @ 22.2mA
Mfr IXYS	Gate Charge (Qg) (Max) @ Vgs 154 nC @ 18 V
Packaging Tube	Vgs (Max) +21V, -4V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 4522 pF @ 800 V
FET Type N-Channel	Power Dissipation (Max) 266W
Technology SiCFET (Silicon Carbide)	Operating Temperature -40°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 85A (Tc)	Supplier Device Package ISO247-3L
Drive Voltage (Max Rds On, Min Rds On) 18V	Package / Case TO-247-3
Rds On (Max) @ Id, Vgs 22.5mOhm @ 40A, 18V

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Tube

Manufacturers Standard Package

Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.

Unit Price without JCT:	¥5,848.00000
Unit Price with JCT:	¥6,432.80000

IXSJ80N120R1