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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPI086N10N3GXKSA1 | |
|---|---|
DigiKey Part Number | IPI086N10N3GXKSA1-ND |
Manufacturer | |
Manufacturer Product Number | IPI086N10N3GXKSA1 |
Description | MOSFET N-CH 100V 80A TO262-3 |
Manufacturer Standard Lead Time | 8 Weeks |
Customer Reference | |
Detailed Description | N-Channel 100 V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3 |
Datasheet | Datasheet |
EDA/CAD Models | IPI086N10N3GXKSA1 Models |
Product Attributes
Type | Description | Select All |
|---|---|---|
Category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 100 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 8.6mOhm @ 73A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 75µA | |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 125W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO262-3 | |
Package / Case | ||
Base Product Number |
In-Stock: 500
Check for Additional Incoming Stock
Quantity
All prices are in JPY
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | ¥353.00000 | ¥353 |
| 50 | ¥171.54000 | ¥8,577 |
| 100 | ¥153.87000 | ¥15,387 |
| 500 | ¥122.88600 | ¥61,443 |
| 1,000 | ¥112.92400 | ¥112,924 |
| 2,000 | ¥104.54650 | ¥209,093 |
| 5,000 | ¥100.10540 | ¥500,527 |
| Unit Price without JCT: | ¥353.00000 |
|---|---|
| Unit Price with JCT: | ¥388.30000 |
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