TO-262-3 Long Leads, I2PAK, TO-262AA Single FETs, MOSFETs

Results: 902
Manufacturer
Alpha & Omega Semiconductor Inc.Fairchild SemiconductorHarris CorporationInfineon TechnologiesInternational RectifierIXYSNEC CorporationNexperia USA Inc.NXP SemiconductorsNXP USA Inc.onsemiRenesasRenesas Electronics CorporationSTMicroelectronics
Series
-AlphaMOSAlphaSGT™aMOS5™aMOS™CoolMOS®CoolMOS™CoolMOS™ CECoolMOS™ CFD2CoolMOS™ E6DeepGATE™, STripFET™ VIDeepGATE™, STripFET™ VII
Packaging
BulkTape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyLast Time BuyNot For New DesignsObsolete
FET Type
-N-ChannelP-Channel
Technology
-MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V24 V25 V30 V40 V55 V60 V75 V80 V100 V108 V120 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Ta)1.5A (Tc)1.7A (Tc)1.8A (Tc)2A (Tc)2.1A (Tc)2.2A (Tc)2.3A (Tc)2.4A (Tc)2.5A (Tc)2.7A (Tc)2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V2.8V, 10V4V, 10V4V, 5V4.3V, 10V4.5V, 10V4.5V, 7V5V5V, 10V6V, 10V7V, 10V8V, 10V10V
Rds On (Max) @ Id, Vgs
1.3mOhm @ 25A, 10V1.6mOhm @ 100A, 10V1.6mOhm @ 25A, 10V1.65mOhm @ 195A, 10V1.7mOhm @ 195A, 10V1.7mOhm @ 25A, 10V1.7mOhm @ 60A, 10V1.75mOhm @ 195A, 10V1.8mOhm @ 100A, 10V1.8mOhm @ 25A, 10V1.8mOhm @ 60A, 10V1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)1V @ 250µA2V @ 130µA2V @ 1mA2V @ 20µA2V @ 250µA2V @ 253µA2V @ 2mA2V @ 37µA2V @ 40µA2V @ 60µA2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 10 V5.2 nC @ 5 V5.2 nC @ 10 V6 nC @ 5 V6 nC @ 10 V6.1 nC @ 5 V6.4 nC @ 5 V6.5 nC @ 10 V7 nC @ 10 V7.2 nC @ 4.5 V7.5 nC @ 10 V8 nC @ 5 V
Vgs (Max)
+5V, -16V±8V±10V±12V±15V±16V±18V+20V, -16V±20V±25V±30V30V
Input Capacitance (Ciss) (Max) @ Vds
130 pF @ 25 V140 pF @ 25 V170 pF @ 25 V180 pF @ 25 V200 pF @ 25 V220 pF @ 25 V230 pF @ 25 V235 pF @ 25 V240 pF @ 25 V250 pF @ 25 V255 pF @ 100 V260 pF @ 25 V
Power Dissipation (Max)
1.5W (Ta), 119W (Tc)1.5W (Ta), 156W (Tc)1.65W (Ta), 65W (Tc)1.65W (Ta), 90W (Tc)1.8W (Ta), 115W (Tc)1.8W (Ta), 120W (Tc)1.8W (Ta), 143W (Tc)1.8W (Ta), 200W (Tc)1.9W (Ta), 250W (Tc)1.9W (Ta), 300W (Tc)1.9W (Ta), 333W (Tc)1.9W (Ta), 500W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-60°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)150°C (TJ)175°C175°C (TJ)-
Mounting Type
Surface MountThrough Hole
Supplier Device Package
I2PAKI2PAK (TO-262)PG-TO262PG-TO262-3PG-TO262-3-1PG-TO262-3-901TO-262TO-262 (I2PAK)TO-262-3TO-262AATO-262FTO-263 (MP-25SK)
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-262-3
IRF4905LPBF
MOSFET P-CH 55V 42A TO262
Infineon Technologies
10,713
In Stock
1 : ¥308.00000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
55 V
42A (Tc)
10V
20mOhm @ 42A, 10V
4V @ 250µA
180 nC @ 10 V
±20V
3500 pF @ 25 V
-
170W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262-3
IRFSL7437PBF
MOSFET N-CH 40V 195A TO262
Infineon Technologies
2,740
In Stock
1 : ¥350.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
195A (Tc)
6V, 10V
1.8mOhm @ 100A, 10V
3.9V @ 150µA
225 nC @ 10 V
±20V
7330 pF @ 25 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262-3
IRF1404LPBF
MOSFET N-CH 40V 162A TO262
Infineon Technologies
7,650
In Stock
1 : ¥470.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
162A (Tc)
10V
4mOhm @ 95A, 10V
4V @ 250µA
200 nC @ 10 V
±20V
7360 pF @ 25 V
-
3.8W (Ta), 200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRFSL6535 back
IPI075N15N3GXKSA1
MOSFET N-CH 150V 100A TO262-3
Infineon Technologies
991
In Stock
1 : ¥1,117.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
100A (Tc)
8V, 10V
7.5mOhm @ 100A, 10V
4V @ 270µA
93 nC @ 10 V
±20V
5470 pF @ 75 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRFSL6535 back
IPI90N04S402AKSA1
MOSFET N-CH 40V 90A TO262-3
Infineon Technologies
439
In Stock
1 : ¥343.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
90A (Tc)
10V
2.5mOhm @ 90A, 10V
4V @ 95µA
118 nC @ 10 V
±20V
9430 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
IRF840ALPBF
IRFBE30LPBF
MOSFET N-CH 800V 4.1A I2PAK
Vishay Siliconix
989
In Stock
1 : ¥458.00000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
4.1A (Tc)
10V
3Ohm @ 2.5A, 10V
4V @ 250µA
78 nC @ 10 V
±20V
1300 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
I2PAK
TO-262-3 Long Leads, I2PAK, TO-262AA
IRF840ALPBF
IRFSL9N60APBF
MOSFET N-CH 600V 9.2A I2PAK
Vishay Siliconix
900
In Stock
1 : ¥460.00000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
9.2A (Tc)
10V
750mOhm @ 5.5A, 10V
4V @ 250µA
49 nC @ 10 V
±30V
1400 pF @ 25 V
-
170W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
I2PAK
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262-3
IRFSL4010PBF
MOSFET N-CH 100V 180A TO262
Infineon Technologies
2,683
In Stock
1 : ¥612.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
4.7mOhm @ 106A, 10V
4V @ 250µA
215 nC @ 10 V
±20V
9575 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRFSL6535 back
IPI045N10N3GXKSA1
MOSFET N-CH 100V 100A TO262-3
Infineon Technologies
944
In Stock
1 : ¥629.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Tc)
6V, 10V
4.5mOhm @ 100A, 10V
3.5V @ 150µA
117 nC @ 10 V
±20V
8410 pF @ 50 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
2,975
In Stock
1 : ¥306.00000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
100A (Ta)
10V
3.7mOhm @ 50A, 10V
-
100 nC @ 10 V
±20V
5550 pF @ 25 V
-
1.5W (Ta), 119W (Tc)
150°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
IRF840ALPBF
IRF840ALPBF
MOSFET N-CH 500V 8A I2PAK
Vishay Siliconix
313
In Stock
1 : ¥314.00000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
8A (Tc)
10V
850mOhm @ 4.8A, 10V
4V @ 250µA
38 nC @ 10 V
±30V
1018 pF @ 25 V
-
3.1W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
I2PAK
TO-262-3 Long Leads, I2PAK, TO-262AA
1,470
In Stock
1 : ¥321.00000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Ta)
10V
4.6mOhm @ 50A, 10V
-
133 nC @ 10 V
±20V
7730 pF @ 25 V
-
1.5W (Ta), 156W (Tc)
150°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
IRF840ALPBF
IRF840LCLPBF
MOSFET N-CH 500V 8A I2PAK
Vishay Siliconix
1,967
In Stock
1 : ¥333.00000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
8A (Tc)
10V
850mOhm @ 4.8A, 10V
4V @ 250µA
39 nC @ 10 V
±30V
1100 pF @ 25 V
-
3.1W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
I2PAK
TO-262-3 Long Leads, I2PAK, TO-262AA
IRF840ALPBF
IRF740ALPBF
MOSFET N-CH 400V 10A I2PAK
Vishay Siliconix
865
In Stock
1 : ¥350.00000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
400 V
10A (Tc)
10V
550mOhm @ 6A, 10V
4V @ 250µA
36 nC @ 10 V
±30V
1030 pF @ 25 V
-
3.1W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
I2PAK
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262-3
IRFSL3207ZPBF
MOSFET N-CH 75V 120A TO262
Infineon Technologies
880
In Stock
1 : ¥398.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
75 V
120A (Tc)
10V
4.1mOhm @ 75A, 10V
4V @ 150µA
170 nC @ 10 V
±20V
6920 pF @ 50 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
7,987
In Stock
1 : ¥497.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
28A (Tc)
10V
125mOhm @ 14A, 10V
4.5V @ 250µA
39 nC @ 10 V
±20V
2993 pF @ 100 V
-
312.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262-3
IRLSL4030PBF
MOSFET N-CH 100V 180A TO262
Infineon Technologies
840
In Stock
1 : ¥515.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
4.5V, 10V
4.3mOhm @ 110A, 10V
2.5V @ 250µA
130 nC @ 4.5 V
±16V
11360 pF @ 50 V
-
370W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262-3
IRFSL7440PBF
MOSFET N CH 40V 120A TO-262
Infineon Technologies
995
In Stock
1 : ¥191.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
120A (Tc)
6V, 10V
2.5mOhm @ 100A, 10V
3.9V @ 100µA
135 nC @ 10 V
±20V
4730 pF @ 25 V
-
208W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRFSL6535 back
IPI80N04S403AKSA1
MOSFET N-CH 40V 80A TO262-3
Infineon Technologies
498
In Stock
1 : ¥291.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
80A (Tc)
10V
3.7mOhm @ 80A, 10V
4V @ 53µA
66 nC @ 10 V
±20V
5260 pF @ 25 V
-
94W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262-3
IRFSL5615PBF
MOSFET N-CH 150V 33A TO262
Infineon Technologies
984
In Stock
1 : ¥296.00000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
33A (Tc)
10V
42mOhm @ 21A, 10V
5V @ 100µA
40 nC @ 10 V
±20V
1750 pF @ 50 V
-
144W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262-3
IPI80N06S407AKSA2
MOSFET N-CH 60V 80A TO262-3
Infineon Technologies
675
In Stock
1 : ¥335.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
80A (Tc)
10V
7.4mOhm @ 80A, 10V
4V @ 40µA
56 nC @ 10 V
±20V
4500 pF @ 25 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRFSL6535 back
IPI70N04S406AKSA1
MOSFET N-CH 40V 70A TO262-3
Infineon Technologies
500
In Stock
1 : ¥341.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
70A (Tc)
10V
6.5mOhm @ 70A, 10V
4V @ 26µA
32 nC @ 10 V
±20V
2550 pF @ 25 V
-
58W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRFSL6535 back
IPI040N06N3GXKSA1
MOSFET N-CH 60V 90A TO262-3
Infineon Technologies
500
In Stock
1 : ¥363.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
90A (Tc)
10V
4mOhm @ 90A, 10V
4V @ 90µA
98 nC @ 10 V
±20V
11000 pF @ 30 V
-
188W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRFSL6535 back
IPI60R190C6XKSA1
MOSFET N-CH 600V 20.2A TO262-3
Infineon Technologies
495
In Stock
1 : ¥378.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
20.2A (Tc)
10V
190mOhm @ 9.5A, 10V
3.5V @ 630µA
63 nC @ 10 V
±20V
1400 pF @ 100 V
-
151W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRFSL6535 back
IPI076N12N3GAKSA1
MOSFET N-CH 120V 100A TO262-3
Infineon Technologies
498
In Stock
1 : ¥386.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
120 V
100A (Tc)
10V
7.6mOhm @ 100A, 10V
4V @ 130µA
101 nC @ 10 V
±20V
6640 pF @ 60 V
-
188W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
Showing
of 902

TO-262-3 Long Leads, I2PAK, TO-262AA Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.