Name: IMZA65R048M1HXKSA1
Brand: Infineon Technologies
SKU: 448-IMZA65R048M1HXKSA1-ND
Price: 1873.3 JPY
Availability: InStock

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IMZA65R048M1HXKSA1
DigiKey Part Number	448-IMZA65R048M1HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMZA65R048M1HXKSA1
Description	MOSFET 650V NCH SIC TRENCH
Customer Reference
Detailed Description	N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-4-3
Datasheet	Datasheet
EDA/CAD Models	IMZA65R048M1HXKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5.7V @ 6mA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 33 nC @ 18 V
Series CoolSiC™	Vgs (Max) +23V, -5V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1118 pF @ 400 V
Part Status Not For New Designs	Power Dissipation (Max) 125W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology SiCFET (Silicon Carbide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 650 V	Supplier Device Package PG-TO247-4-3
Current - Continuous Drain (Id) @ 25°C 39A (Tc)	Package / Case TO-247-4
Drive Voltage (Max Rds On, Min Rds On) 18V	Base Product Number IMZA65
Rds On (Max) @ Id, Vgs 64mOhm @ 20.1A, 18V