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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IMW65R050M2HXKSA1 | |
|---|---|
DigiKey Part Number | 448-IMW65R050M2HXKSA1-ND |
Manufacturer | |
Manufacturer Product Number | IMW65R050M2HXKSA1 |
Description | SILICON CARBIDE MOSFET |
Manufacturer Standard Lead Time | 61 Weeks |
Customer Reference | |
Detailed Description | N-Channel 650 V 38A (Tc) 153W (Tc) Through Hole PG-TO247-3-40 |
Datasheet | Datasheet |
Product Attributes
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Category | Vgs(th) (Max) @ Id 5.6V @ 3.7mA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 22 nC @ 18 V |
Series | Vgs (Max) +23V, -7V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 400 V |
Part Status Active | Power Dissipation (Max) 153W (Tc) |
FET Type | Operating Temperature -55°C ~ 175°C (TJ) |
Technology | Mounting Type Through Hole |
Drain to Source Voltage (Vdss) 650 V | Supplier Device Package PG-TO247-3-40 |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V | Base Product Number |
Rds On (Max) @ Id, Vgs 46mOhm @ 18.2A, 20V |
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In-Stock: 386
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Quantity
All prices are in JPY
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | ¥1,918.00000 | ¥1,918 |
| 30 | ¥1,126.43333 | ¥33,793 |
| 120 | ¥952.74167 | ¥114,329 |
| 510 | ¥825.52549 | ¥421,018 |
| 1,020 | ¥779.13333 | ¥794,716 |
| 2,010 | ¥740.91891 | ¥1,489,247 |
| Unit Price without JCT: | ¥1,918.00000 |
|---|---|
| Unit Price with JCT: | ¥2,109.80000 |
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