Name: IMBG65R040M2HXTMA1
Brand: Infineon Technologies
SKU: 448-IMBG65R040M2HXTMA1TR-ND
Price: 1886.5 JPY
Availability: InStock

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IMBG65R040M2HXTMA1
DigiKey Part Number	448-IMBG65R040M2HXTMA1TR-ND - Tape & Reel (TR) 448-IMBG65R040M2HXTMA1CT-ND - Cut Tape (CT) 448-IMBG65R040M2HXTMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMBG65R040M2HXTMA1
Description	SILICON CARBIDE MOSFET
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 49A (Tc) 197W (Tc) Surface Mount PG-TO263-7-12
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5.6V @ 4.6mA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 28 nC @ 18 V
Series CoolSiC™ Gen 2	Vgs (Max) +23V, -7V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 997 pF @ 400 V
Part Status Active	Power Dissipation (Max) 197W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 650 V	Supplier Device Package PG-TO263-7-12
Current - Continuous Drain (Id) @ 25°C 49A (Tc)	Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V	Base Product Number IMBG65R040
Rds On (Max) @ Id, Vgs 49mOhm @ 22.9A, 18V