Name: G3R350MT12D
Brand: GeneSiC Semiconductor
SKU: 1242-G3R350MT12D-ND
Price: 829.4 JPY
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

G3R350MT12D
DigiKey Part Number	1242-G3R350MT12D-ND
Manufacturer	GeneSiC Semiconductor
Manufacturer Product Number	G3R350MT12D
Description	SIC MOSFET N-CH 11A TO247-3
Manufacturer Standard Lead Time	20 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 11A (Tc) 74W (Tc) Through Hole TO-247-3
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	GeneSiC Semiconductor
Series	G3R™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id	2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 15 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	334 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	74W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Base Product Number	G3R350

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