TO-263-8
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TO-263-8
TO-263-7

G2R1000MT33J

DigiKey Part Number
1242-G2R1000MT33J-ND
Manufacturer
Manufacturer Product Number
G2R1000MT33J
Description
SIC MOSFET N-CH 4A TO263-7
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 3300 V 4A (Tc) 74W (Tc) Surface Mount TO-263-7
Datasheet
 Datasheet
EDA/CAD Models
G2R1000MT33J Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
3300 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
238 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
Base Product Number
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All prices are in JPY
Tube
QuantityUnit PriceExt Price
1¥2,973.00000¥2,973
10¥2,688.00000¥26,880
25¥2,581.44000¥64,536
100¥2,428.77000¥242,877
250¥2,333.32800¥583,332
500¥2,263.34400¥1,131,672
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without JCT:¥2,973.00000
Unit Price with JCT:¥3,270.30000