N-Channel 650 V 105A (Tc) Through Hole TO-247-4
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DIF065SIC030

DigiKey Part Number
4878-DIF065SIC030-ND
Manufacturer
Diotec Semiconductor
Manufacturer Product Number
DIF065SIC030
Description
SICFET N-CH 650V 105A TO-247-4
Manufacturer Standard Lead Time
6 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 105A (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
EDA/CAD Models
DIF065SIC030 Models
Product Attributes
Type
Description
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Category
Mfr
Diotec Semiconductor
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
30mOhm @ 75A, 18V
Vgs(th) (Max) @ Id
4V @ 23.5mA
Gate Charge (Qg) (Max) @ Vgs
145 nC @ 18 V
Vgs (Max)
+18V, -4V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 600 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
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In-Stock: 600
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Quantity
All prices are in JPY
Tube
QuantityUnit PriceExt Price
1¥3,719.00000¥3,719
30¥2,360.80000¥70,824
120¥2,168.45833¥260,215
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without JCT:¥3,719.00000
Unit Price with JCT:¥4,090.90000