Micro Commercial Components (MCC)

Silicon Carbide (SiC) MOSFETs in 1200 V and 1700 V

MCC’s N-channel SiC MOSFETs have optimum performance when driven with maximum voltage

Image of MCC's Silicon Carbide (SiC) MOSFETs in 1200 V and 1700 VMCC’s SiC MOSFETs are optimized for higher switching frequency, high blocking voltage with low on-resistance (RDS(ON)), and avalanche capability. These products work well in the gate-source voltage (VGS) range from -4 V to +18 V (1200 V) and -3 V to +20 V (1700 V). These N-channel MOSFETs have optimum performance when driven with maximum voltage. The RDS(ON) stability over the temperature helps to reduce the heatsink size/requirements.

Features
  • Optimized for higher switching frequency
  • Stable on resistance over temperature
  • High blocking voltage with low RDS(ON)
  • Reduced heatsink requirement
  • Improved system-level efficiency
  • Avalanche ruggedness
Applications
  • Photovoltaics/solar inverters
  • Energy storage
  • UPS
  • Motor controls/drive circuits
  • Battery chargers
  • Off-board chargers

Silicon Carbide (SiC) MOSFETs in 1200 V and 1700 V

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
N-CHANNEL MOSFET,TO-247-4SICW080N120Y4-BPN-CHANNEL MOSFET,TO-247-40 - Immediate$2,962.00View Details
N-CHANNEL MOSFET,TO-247ABSICW1000N170A-BPN-CHANNEL MOSFET,TO-247AB1805 - Immediate$1,664.00View Details
Published: 2023-05-15