IRF200S234 N-Channel 200V 90A (Tc) 417W (Tc) Surface Mount PG-TO263-3
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Price Break Unit Price Extended Price
1 490.00000 ¥490
10 439.60000 ¥4,396
100 360.18000 ¥36,018

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Alternate Package
  • Tape & Reel (TR)  : IRF200S234TR-ND
  • Minimum Quantity: 800
  • Quantity Available: 0
  • Unit Price: ¥307.84500
  • Digi-Reel®  : IRF200S234DKR-ND
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  • Unit Price: Digi-Reel®

IRF200S234

Datasheet
Digi-Key Part Number IRF200S234CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IRF200S234
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Description MOSFET N-CH 200V 90A D2PAK
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Detailed Description

N-Channel 200V 90A (Tc) 417W (Tc) Surface Mount PG-TO263-3

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Customer Reference
Documents & Media
Datasheets IRF200S234
Other Related Documents IR Part Numbering System
PCN Obsolescence/ EOL IRF200S234 EOL 30/Jul/2021
HTML Datasheet IRF200S234
Simulation Models Infineon IRF200S234-SM-v01_00- EN Saber File
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series -
Packaging Cut Tape (CT) 
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 16.9mOhm @ 51A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 162nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6484pF @ 50V
FET Feature -
Power Dissipation (Max) 417W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number IRF200
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IRF200S234CT