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IPB019N08N3GATMA1 N-Channel 80V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7
Price & Procurement
5,830 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 643.00000 ¥643
10 576.70000 ¥5,767
25 545.24000 ¥13,631
100 436.17000 ¥43,617
250 411.94000 ¥102,985
500 387.70600 ¥193,853

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : IPB019N08N3GATMA1TR-ND
  • Minimum Quantity: 1,000
  • Quantity Available: 5,830 - Immediate
  • Unit Price: ¥331.97400

IPB019N08N3GATMA1

Datasheet
Digi-Key Part Number IPB019N08N3GATMA1CT-ND
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Manufacturer

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Manufacturer Part Number IPB019N08N3GATMA1
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Description MOSFET N-CH 80V 180A TO263-7
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Manufacturer Standard Lead Time 18 Weeks
Detailed Description

N-Channel 80V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7

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Documents & Media
Datasheets IPB019N08N3 G
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Simulation Models MOSFET OptiMOS™ 80V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 40V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IPB019N08N3 GCT
IPB019N08N3 GCT-ND
IPB019N08N3GATMA1CT