SIHP23N60E-GE3
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SUP90100E-GE3

DigiKey Part Number
742-SUP90100E-GE3-ND
Manufacturer
Manufacturer Product Number
SUP90100E-GE3
Description
N-CHANNEL 200 V (D-S) MOSFET TO-
Manufacturer Standard Lead Time
28 Weeks
Customer Reference
Detailed Description
N-Channel 200 V 150A (Tc) 375W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Bulk
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
10.9mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3930 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
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In-Stock: 1,028
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All prices are in JPY
Bulk
QuantityUnit PriceExt Price
1¥644.00000¥644
10¥473.70000¥4,737
100¥358.51000¥35,851
500¥291.18000¥145,590
1,000¥262.83700¥262,837
2,000¥259.45700¥518,914
Manufacturers Standard Package
Unit Price without JCT:¥644.00000
Unit Price with JCT:¥708.40000