Name: SQSA80ENW-T1_GE3
Brand: Vishay Siliconix
SKU: SQSA80ENW-T1_GE3TR-ND
Price: 364.1 JPY
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SQSA80ENW-T1_GE3
DigiKey Part Number	SQSA80ENW-T1_GE3TR-ND - Tape & Reel (TR) SQSA80ENW-T1_GE3CT-ND - Cut Tape (CT) SQSA80ENW-T1_GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SQSA80ENW-T1_GE3
Description	MOSFET N-CH 80V 18A PPAK1212-8
Manufacturer Standard Lead Time	39 Weeks
Customer Reference
Detailed Description	N-Channel 80 V 18A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8
Datasheet	Datasheet
EDA/CAD Models	SQSA80ENW-T1_GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Mfr Vishay Siliconix	Vgs (Max) ±20V
Series TrenchFET®	Input Capacitance (Ciss) (Max) @ Vds 1358 pF @ 40 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Power Dissipation (Max) 62.5W (Tc)
Part Status Active	Operating Temperature -55°C ~ 175°C (TJ)
FET Type N-Channel	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Drain to Source Voltage (Vdss) 80 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 18A (Tc)	Supplier Device Package PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs 21mOhm @ 10A, 10V	Base Product Number SQSA80
Vgs(th) (Max) @ Id 2.5V @ 250µA