Name: SQS660CENW-T1_GE3
Brand: Vishay Siliconix
SKU: 742-SQS660CENW-T1_GE3TR-ND
Price: 261.8 JPY
Availability: InStock

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SQS660CENW-T1_GE3
DigiKey Part Number	742-SQS660CENW-T1_GE3TR-ND - Tape & Reel (TR) 742-SQS660CENW-T1_GE3CT-ND - Cut Tape (CT) 742-SQS660CENW-T1_GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SQS660CENW-T1_GE3
Description	AUTOMOTIVE N-CHANNEL 60 V (D-S)
Manufacturer Standard Lead Time	39 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 18A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8W
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 25 V
Part Status Active	Power Dissipation (Max) 62.5W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology MOSFET (Metal Oxide)	Grade Automotive
Drain to Source Voltage (Vdss) 60 V	Qualification AEC-Q101
Current - Continuous Drain (Id) @ 25°C 18A (Tc)	Mounting Type Surface Mount
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Supplier Device Package PowerPAK® 1212-8W
Rds On (Max) @ Id, Vgs 11.2mOhm @ 7A, 10V	Package / Case PowerPAK® 1212-8W

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