Name: SQM110P06-8M9L_GE3
Brand: Vishay Siliconix
SKU: SQM110P06-8M9L_GE3TR-ND
Price: 823.9 JPY
Availability: InStock

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SQM110P06-8M9L_GE3
DigiKey Part Number	SQM110P06-8M9L_GE3TR-ND - Tape & Reel (TR) SQM110P06-8M9L_GE3CT-ND - Cut Tape (CT) SQM110P06-8M9L_GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SQM110P06-8M9L_GE3
Description	MOSFET P-CH 60V 110A TO263
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	P-Channel 60 V 110A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet
EDA/CAD Models	SQM110P06-8M9L_GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Mfr Vishay Siliconix	Vgs (Max) ±20V
Series TrenchFET®	Input Capacitance (Ciss) (Max) @ Vds 7450 pF @ 25 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Power Dissipation (Max) 230W (Tc)
Part Status Active	Operating Temperature -55°C ~ 175°C (TJ)
FET Type P-Channel	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Drain to Source Voltage (Vdss) 60 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 110A (Tc)	Supplier Device Package TO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs 8.9mOhm @ 30A, 10V	Base Product Number SQM110
Vgs(th) (Max) @ Id 2.5V @ 250µA