Name: SQJ912DEP-T1_GE3
Brand: Vishay Siliconix
SKU: 742-SQJ912DEP-T1_GE3TR-ND
Price: 309.1 JPY
Availability: InStock

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SQJ912DEP-T1_GE3
DigiKey Part Number	742-SQJ912DEP-T1_GE3TR-ND - Tape & Reel (TR) 742-SQJ912DEP-T1_GE3CT-ND - Cut Tape (CT) 742-SQJ912DEP-T1_GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SQJ912DEP-T1_GE3
Description	MOSFET 2N-CH 40V 30A PPAK SO8
Manufacturer Standard Lead Time	39 Weeks
Customer Reference
Detailed Description	Mosfet Array 40V 30A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual
Datasheet	Datasheet
EDA/CAD Models	SQJ912DEP-T1_GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays	Vgs(th) (Max) @ Id 2.5V @ 250µA
Manufacturer Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Series TrenchFET®	Power - Max 27W (Tc)
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Operating Temperature -55°C ~ 175°C (TJ)
Part Status Active	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Configuration 2 N-Channel (Dual)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 40V	Package / Case PowerPAK® SO-8 Dual
Current - Continuous Drain (Id) @ 25°C 30A (Tc)	Supplier Device Package PowerPAK® SO-8 Dual
Rds On (Max) @ Id, Vgs 7.3mOhm @ 7A, 10V	Base Product Number SQJ912