Name: SISS26LDN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS26LDN-T1-GE3TR-ND
Price: 271.7 JPY
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SISS26LDN-T1-GE3
DigiKey Part Number	SISS26LDN-T1-GE3TR-ND - Tape & Reel (TR) SISS26LDN-T1-GE3CT-ND - Cut Tape (CT) SISS26LDN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISS26LDN-T1-GE3
Description	MOSFET N-CH 60V 23.7A/81.2A PPAK
Manufacturer Standard Lead Time	10 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 23.7A (Ta), 81.2A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	23.7A (Ta), 81.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1980 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	4.8W (Ta), 57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S
Base Product Number	SISS26