Name: SISS22LDN-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SISS22LDN-T1-GE3TR-ND
Price: 254.1 JPY
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SISS22LDN-T1-GE3
DigiKey Part Number	742-SISS22LDN-T1-GE3TR-ND - Tape & Reel (TR) 742-SISS22LDN-T1-GE3CT-ND - Cut Tape (CT) 742-SISS22LDN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISS22LDN-T1-GE3
Description	MOSFET N-CH 60V 25.5A/92.5A PPAK
Manufacturer Standard Lead Time	10 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 25.5A (Ta), 92.5A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S
Datasheet	Datasheet
EDA/CAD Models	SISS22LDN-T1-GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	25.5A (Ta), 92.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2540 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S
Base Product Number	SISS22