Name: SISS10ADN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS10ADN-T1-GE3TR-ND
Price: 290.4 JPY
Availability: InStock

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SISS10ADN-T1-GE3
DigiKey Part Number	SISS10ADN-T1-GE3TR-ND - Tape & Reel (TR) SISS10ADN-T1-GE3CT-ND - Cut Tape (CT) SISS10ADN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISS10ADN-T1-GE3
Description	MOSFET N-CH 40V 31.7A/109A PPAK
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 40 V 31.7A (Ta), 109A (Tc) 4.8W (Ta), 56.8W (Tc) Surface Mount PowerPAK® 1212-8S
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V
Series TrenchFET® Gen IV	Vgs (Max) +20V, -16V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 3030 pF @ 20 V
Part Status Active	Power Dissipation (Max) 4.8W (Ta), 56.8W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 40 V	Supplier Device Package PowerPAK® 1212-8S
Current - Continuous Drain (Id) @ 25°C 31.7A (Ta), 109A (Tc)	Package / Case PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SISS10
Rds On (Max) @ Id, Vgs 2.65mOhm @ 15A, 10V