Name: SIHD6N80E-GE3
Brand: Vishay Siliconix
SKU: SIHD6N80E-GE3-ND
Price: 559.9 JPY
Availability: InStock

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SIHD6N80E-GE3
DigiKey Part Number	SIHD6N80E-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHD6N80E-GE3
Description	MOSFET N-CH 800V 5.4A DPAK
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 5.4A (Tc) 78W (Tc) Surface Mount TO-252AA
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Series E	Vgs (Max) ±30V
Packaging Bulk	Input Capacitance (Ciss) (Max) @ Vds 827 pF @ 100 V
Part Status Active	Power Dissipation (Max) 78W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 800 V	Supplier Device Package TO-252AA
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc)	Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number SIHD6
Rds On (Max) @ Id, Vgs 940mOhm @ 3A, 10V

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Substitutes (1)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
TK5P60W,RVQ	Toshiba Semiconductor and Storage	3,664	TK5P60WRVQCT-ND	¥542.00000	Similar

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Unit Price without JCT:	¥509.00000
Unit Price with JCT:	¥559.90000

SIHD6N80E-GE3