Name: SIHB30N60E-GE3
Brand: Vishay Siliconix
SKU: SIHB30N60E-GE3-ND
Price: 1316.7 JPY
Availability: InStock

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SIHB30N60E-GE3
DigiKey Part Number	SIHB30N60E-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHB30N60E-GE3
Description	MOSFET N-CH 600V 29A D2PAK
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 29A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Packaging Tube	Vgs (Max) ±30V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 100 V
FET Type N-Channel	Power Dissipation (Max) 250W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 600 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 29A (Tc)	Supplier Device Package TO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs 125mOhm @ 15A, 10V	Base Product Number SIHB30

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Unit Price without JCT:	¥1,197.00000
Unit Price with JCT:	¥1,316.70000

SIHB30N60E-GE3