Name: SIHB22N60ET1-GE3
Brand: Vishay Siliconix
SKU: SIHB22N60ET1-GE3TR-ND
Price: 884.4 JPY
Availability: InStock

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SIHB22N60ET1-GE3
DigiKey Part Number	SIHB22N60ET1-GE3TR-ND - Tape & Reel (TR) SIHB22N60ET1-GE3CT-ND - Cut Tape (CT) SIHB22N60ET1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHB22N60ET1-GE3
Description	MOSFET N-CH 600V 21A TO263
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Series E	Vgs (Max) ±30V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1920 pF @ 100 V
Part Status Active	Power Dissipation (Max) 227W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 600 V	Supplier Device Package TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C 21A (Tc)	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number SIHB22
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V

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