Name: SIHB125N60EF-GE3
Brand: Vishay Siliconix
SKU: 742-SIHB125N60EF-GE3-ND
Price: 1036.2 JPY
Availability: InStock

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SIHB125N60EF-GE3
DigiKey Part Number	742-SIHB125N60EF-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHB125N60EF-GE3
Description	MOSFET N-CH 600V 25A D2PAK
Manufacturer Standard Lead Time	28 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 25A (Tc) 179W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Series EF	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1533 pF @ 100 V
Part Status Active	Power Dissipation (Max) 179W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 600 V	Supplier Device Package TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C 25A (Tc)	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number SIHB125
Rds On (Max) @ Id, Vgs 125mOhm @ 12A, 10V

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Tube

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Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.

Unit Price without JCT:	¥942.00000
Unit Price with JCT:	¥1,036.20000

SIHB125N60EF-GE3