Name: SIAA02DJ-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SIAA02DJ-T1-GE3TR-ND
Price: 181.5 JPY
Availability: InStock

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SIAA02DJ-T1-GE3
DigiKey Part Number	742-SIAA02DJ-T1-GE3TR-ND - Tape & Reel (TR) 742-SIAA02DJ-T1-GE3CT-ND - Cut Tape (CT) 742-SIAA02DJ-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIAA02DJ-T1-GE3
Description	MOSFET N-CH 20V 22A/52A PPAK
Manufacturer Standard Lead Time	19 Weeks
Customer Reference
Detailed Description	N-Channel 20 V 22A (Ta), 52A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Datasheet	Datasheet
EDA/CAD Models	SIAA02DJ-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 1.6V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Series TrenchFET® Gen IV	Vgs (Max) +12V, -8V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 10 V
Part Status Active	Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 20 V	Supplier Device Package PowerPAK® SC-70-6
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 52A (Tc)	Package / Case PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V	Base Product Number SIAA02
Rds On (Max) @ Id, Vgs 4.7mOhm @ 8A, 10V