Name: SIA910EDJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA910EDJ-T1-GE3TR-ND
Price: 187 JPY
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIA910EDJ-T1-GE3
DigiKey Part Number	SIA910EDJ-T1-GE3TR-ND - Tape & Reel (TR) SIA910EDJ-T1-GE3CT-ND - Cut Tape (CT) SIA910EDJ-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIA910EDJ-T1-GE3
Description	MOSFET 2N-CH 12V 4.5A PPAK8X8
Manufacturer Standard Lead Time	28 Weeks
Customer Reference
Detailed Description	Mosfet Array 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Datasheet	Datasheet
EDA/CAD Models	SIA910EDJ-T1-GE3 Models

Product Attributes

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays	Rds On (Max) @ Id, Vgs 28mOhm @ 5.2A, 4.5V
Manufacturer Vishay Siliconix	Vgs(th) (Max) @ Id 1V @ 250µA
Series TrenchFET®	Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 455pF @ 6V
Part Status Active	Power - Max 7.8W
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Configuration 2 N-Channel (Dual)	Mounting Type Surface Mount
FET Feature Logic Level Gate	Package / Case PowerPAK® SC-70-6 Dual
Drain to Source Voltage (Vdss) 12V	Supplier Device Package PowerPAK® SC-70-6 Dual
Current - Continuous Drain (Id) @ 25°C 4.5A	Base Product Number SIA910