Name: SIA427DJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA427DJ-T1-GE3TR-ND
Price: 162.8 JPY
Availability: InStock

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SIA427DJ-T1-GE3
DigiKey Part Number	SIA427DJ-T1-GE3TR-ND - Tape & Reel (TR) SIA427DJ-T1-GE3CT-ND - Cut Tape (CT) SIA427DJ-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIA427DJ-T1-GE3
Description	MOSFET P-CH 8V 12A PPAK SC70-6
Manufacturer Standard Lead Time	28 Weeks
Customer Reference
Detailed Description	P-Channel 8 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Datasheet	Datasheet
EDA/CAD Models	SIA427DJ-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 800mV @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 50 nC @ 5 V
Series TrenchFET®	Vgs (Max) ±5V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 4 V
Part Status Active	Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
FET Type P-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 8 V	Supplier Device Package PowerPAK® SC-70-6
Current - Continuous Drain (Id) @ 25°C 12A (Tc)	Package / Case PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V	Base Product Number SIA427
Rds On (Max) @ Id, Vgs 16mOhm @ 8.2A, 4.5V