Name: SI8425DB-T1-E1
Brand: Vishay Siliconix
SKU: SI8425DB-T1-E1TR-ND
Price: 226.6 JPY
Availability: OutOfStock

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SI8425DB-T1-E1
DigiKey Part Number	SI8425DB-T1-E1TR-ND - Tape & Reel (TR) SI8425DB-T1-E1CT-ND - Cut Tape (CT) SI8425DB-T1-E1DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI8425DB-T1-E1
Description	MOSFET P-CH 20V 4WLCSP
Manufacturer Standard Lead Time	38 Weeks
Customer Reference
Detailed Description	P-Channel 20 V 5.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6)
Datasheet	Datasheet
EDA/CAD Models	SI8425DB-T1-E1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 900mV @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±10V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 10 V
Part Status Active	Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc)
FET Type P-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 20 V	Supplier Device Package 4-WLCSP (1.6x1.6)
Current - Continuous Drain (Id) @ 25°C 5.9A (Ta)	Package / Case 4-UFBGA, WLCSP
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V	Base Product Number SI8425
Rds On (Max) @ Id, Vgs 23mOhm @ 2A, 4.5V