Name: SI7119DN-T1-E3
Brand: Vishay Siliconix
SKU: SI7119DN-T1-E3TR-ND
Price: 300.3 JPY
Availability: InStock

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SI7119DN-T1-E3
DigiKey Part Number	SI7119DN-T1-E3TR-ND - Tape & Reel (TR) SI7119DN-T1-E3CT-ND - Cut Tape (CT) SI7119DN-T1-E3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI7119DN-T1-E3
Description	MOSFET P-CH 200V 3.8A PPAK1212-8
Manufacturer Standard Lead Time	63 Weeks
Customer Reference
Detailed Description	P-Channel 200 V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Datasheet	Datasheet
EDA/CAD Models	SI7119DN-T1-E3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 50 V
Part Status Active	Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
FET Type P-Channel	Operating Temperature -50°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 200 V	Supplier Device Package PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc)	Package / Case PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V	Base Product Number SI7119
Rds On (Max) @ Id, Vgs 1.05Ohm @ 1A, 10V