Name: SI5442DU-T1-GE3
Brand: Vishay Siliconix
SKU: SI5442DU-T1-GE3TR-ND
Price: 195.8 JPY
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI5442DU-T1-GE3
DigiKey Part Number	SI5442DU-T1-GE3TR-ND - Tape & Reel (TR) SI5442DU-T1-GE3CT-ND - Cut Tape (CT) SI5442DU-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI5442DU-T1-GE3
Description	MOSFET N-CH 20V 25A PPAK
Manufacturer Standard Lead Time	38 Weeks
Customer Reference
Detailed Description	N-Channel 20 V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single
Datasheet	Datasheet
EDA/CAD Models	SI5442DU-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 900mV @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 45 nC @ 8 V
Series TrenchFET®	Vgs (Max) ±8V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 10 V
Part Status Active	Power Dissipation (Max) 3.1W (Ta), 31W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 20 V	Supplier Device Package PowerPAK® ChipFet Single
Current - Continuous Drain (Id) @ 25°C 25A (Tc)	Package / Case PowerPAK® ChipFET™ Single
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V	Base Product Number SI5442
Rds On (Max) @ Id, Vgs 10mOhm @ 8A, 4.5V