Name: SI4153DY-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SI4153DY-T1-GE3TR-ND
Price: 228.8 JPY
Availability: InStock

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SI4153DY-T1-GE3
DigiKey Part Number	742-SI4153DY-T1-GE3TR-ND - Tape & Reel (TR) 742-SI4153DY-T1-GE3CT-ND - Cut Tape (CT) 742-SI4153DY-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI4153DY-T1-GE3
Description	P-CHANNEL 30-V (D-S) MOSFET SO-8
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	P-Channel 30 V 14.3A (Ta), 19.3A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SOIC
Datasheet	Datasheet
EDA/CAD Models	SI4153DY-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 10V
Mfr Vishay Siliconix	Vgs(th) (Max) @ Id 2.5V @ 250µA
Series TrenchFET® Gen III	Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) ±25V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 15 V
FET Type P-Channel	Power Dissipation (Max) 3.1W (Ta), 5.6W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 14.3A (Ta), 19.3A (Tc)	Supplier Device Package 8-SOIC
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case 8-SOIC (0.154", 3.90mm Width)