Name: SI4100DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4100DY-T1-E3TR-ND
Price: 364.1 JPY
Availability: InStock

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SI4100DY-T1-E3
DigiKey Part Number	SI4100DY-T1-E3TR-ND - Tape & Reel (TR) SI4100DY-T1-E3CT-ND - Cut Tape (CT) SI4100DY-T1-E3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI4100DY-T1-E3
Description	MOSFET N-CH 100V 6.8A 8SO
Manufacturer Standard Lead Time	38 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 6.8A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SOIC
Datasheet	Datasheet
EDA/CAD Models	SI4100DY-T1-E3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4.5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 50 V
Part Status Active	Power Dissipation (Max) 2.5W (Ta), 6W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 100 V	Supplier Device Package 8-SOIC
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc)	Package / Case 8-SOIC (0.154", 3.90mm Width)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V	Base Product Number SI4100
Rds On (Max) @ Id, Vgs 63mOhm @ 4.4A, 10V