Name: SI3429EDV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3429EDV-T1-GE3TR-ND
Price: 138.6 JPY
Availability: InStock

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SI3429EDV-T1-GE3
DigiKey Part Number	SI3429EDV-T1-GE3TR-ND - Tape & Reel (TR) SI3429EDV-T1-GE3CT-ND - Cut Tape (CT) SI3429EDV-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI3429EDV-T1-GE3
Description	MOSFET P-CH 20V 8A/8A 6TSOP
Manufacturer Standard Lead Time	38 Weeks
Customer Reference
Detailed Description	P-Channel 20 V 8A (Ta), 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP
Datasheet	Datasheet
EDA/CAD Models	SI3429EDV-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 1V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±8V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 4085 pF @ 50 V
Part Status Active	Power Dissipation (Max) 4.2W (Tc)
FET Type P-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 20 V	Supplier Device Package 6-TSOP
Current - Continuous Drain (Id) @ 25°C 8A (Ta), 8A (Tc)	Package / Case SOT-23-6 Thin, TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V	Base Product Number SI3429
Rds On (Max) @ Id, Vgs 21mOhm @ 4A, 4.5V