Name: SI2342DS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2342DS-T1-GE3TR-ND
Price: 149.6 JPY
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI2342DS-T1-GE3
DigiKey Part Number	SI2342DS-T1-GE3TR-ND - Tape & Reel (TR) SI2342DS-T1-GE3CT-ND - Cut Tape (CT) SI2342DS-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI2342DS-T1-GE3
Description	MOSFET N-CH 8V 6A SOT-23
Manufacturer Standard Lead Time	38 Weeks
Customer Reference
Detailed Description	N-Channel 8 V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet	Datasheet
EDA/CAD Models	SI2342DS-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 800mV @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 15.8 nC @ 4.5 V
Series TrenchFET®	Vgs (Max) ±5V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1070 pF @ 4 V
Part Status Active	Power Dissipation (Max) 2.5W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 8 V	Supplier Device Package SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C 6A (Tc)	Package / Case TO-236-3, SC-59, SOT-23-3
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V	Base Product Number SI2342
Rds On (Max) @ Id, Vgs 17mOhm @ 7.2A, 4.5V