Name: SI2338DS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2338DS-T1-GE3TR-ND
Price: 154 JPY
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI2338DS-T1-GE3
DigiKey Part Number	SI2338DS-T1-GE3TR-ND - Tape & Reel (TR) SI2338DS-T1-GE3CT-ND - Cut Tape (CT) SI2338DS-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI2338DS-T1-GE3
Description	MOSFET N-CH 30V 6A SOT23
Manufacturer Standard Lead Time	38 Weeks
Customer Reference
Detailed Description	N-Channel 30 V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet	Datasheet

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 424 pF @ 15 V
Part Status Active	Power Dissipation (Max) 1.3W (Ta), 2.5W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 30 V	Supplier Device Package SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C 6A (Tc)	Package / Case TO-236-3, SC-59, SOT-23-3
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SI2338
Rds On (Max) @ Id, Vgs 28mOhm @ 5.5A, 10V