Name: SI2319DDS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2319DDS-T1-GE3TR-ND
Price: 132 JPY
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI2319DDS-T1-GE3
DigiKey Part Number	SI2319DDS-T1-GE3TR-ND - Tape & Reel (TR) SI2319DDS-T1-GE3CT-ND - Cut Tape (CT) SI2319DDS-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI2319DDS-T1-GE3
Description	MOSFET P-CH 40V 2.7A/3.6A SOT23
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	P-Channel 40 V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet	Datasheet
EDA/CAD Models	SI2319DDS-T1-GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta), 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	75mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SI2319