Name: IRFBE30PBF
Brand: Vishay Siliconix
SKU: IRFBE30PBF-ND
Price: 911.9 JPY
Availability: InStock

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IRFBE30PBF
DigiKey Part Number	IRFBE30PBF-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	IRFBE30PBF
Description	MOSFET N-CH 800V 4.1A TO220AB
Manufacturer Standard Lead Time	37 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet	Datasheet
EDA/CAD Models	IRFBE30PBF Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Packaging Tube	Vgs (Max) ±20V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
FET Type N-Channel	Power Dissipation (Max) 125W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 800 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)	Supplier Device Package TO-220AB
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-220-3
Rds On (Max) @ Id, Vgs 3Ohm @ 2.5A, 10V	Base Product Number IRFBE30

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Manufacturers Standard Package

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Unit Price without JCT:	¥829.00000
Unit Price with JCT:	¥911.90000

IRFBE30PBF