Name: XPN9R614MC,L1XHQ
Brand: Toshiba Semiconductor and Storage
SKU: 264-XPN9R614MCL1XHQTR-ND
Price: 227.7 JPY
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

XPN9R614MC,L1XHQ
DigiKey Part Number	264-XPN9R614MCL1XHQTR-ND - Tape & Reel (TR) 264-XPN9R614MCL1XHQCT-ND - Cut Tape (CT) 264-XPN9R614MCL1XHQDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	XPN9R614MC,L1XHQ
Description	MOSFET P-CH 40V 40A 8TSON
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	P-Channel 40 V 40A (Ta) 840mW (Ta), 100W (Tc) Surface Mount 8-TSON Advance-WF (3.1x3.1)
Datasheet	Datasheet
EDA/CAD Models	XPN9R614MC,L1XHQ Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Vgs (Max)	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	840mW (Ta), 100W (Tc)
Operating Temperature	175°C
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance-WF (3.1x3.1)
Package / Case	8-PowerVDFN
Base Product Number	XPN9R614