TRS6E65C,S1Q
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TRS4E65H,S1Q

DigiKey Part Number
264-TRS4E65H,S1Q-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TRS4E65H,S1Q
Description
DIODE SIL CARBIDE 650V 4A TO220L
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
Diode 650 V 4A Through Hole TO-220-2L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
4A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 4 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
55 µA @ 650 V
Capacitance @ Vr, F
263pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C
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In-Stock: 341
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Quantity
All prices are in JPY
Tube
QuantityUnit PriceExt Price
1¥429.00000¥429
50¥220.04000¥11,002
100¥218.22000¥21,822
500¥176.81600¥88,408
1,000¥162.07900¥162,079
2,000¥154.79600¥309,592
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without JCT:¥429.00000
Unit Price with JCT:¥471.90000