TRS6E65C,S1Q
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TRS3E65H,S1Q

DigiKey Part Number
264-TRS3E65H,S1Q-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TRS3E65H,S1Q
Description
DIODE SIL CARBIDE 650V 3A TO220L
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
Diode 650 V 3A Through Hole TO-220-2L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 3 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
45 µA @ 650 V
Capacitance @ Vr, F
199pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C
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In-Stock: 386
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Quantity
All prices are in JPY
Tube
QuantityUnit PriceExt Price
1¥279.00000¥279
50¥150.44000¥7,522
100¥149.87000¥14,987
500¥141.90600¥70,953
1,000¥135.55600¥135,556
2,000¥135.32100¥270,642
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without JCT:¥279.00000
Unit Price with JCT:¥306.90000