Name: TPW2900ENH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: 264-TPW2900ENH,L1QTR-ND
Price: 716.1 JPY
Availability: InStock

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TPW2900ENH,L1Q
DigiKey Part Number	264-TPW2900ENH,L1QTR-ND - Tape & Reel (TR) 264-TPW2900ENH,L1QCT-ND - Cut Tape (CT) 264-TPW2900ENH,L1QDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPW2900ENH,L1Q
Description	PB-F POWER MOSFET TRANSISTOR DSO
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 200 V 33A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 29mOhm @ 16.5A, 10V
Mfr Toshiba Semiconductor and Storage	Vgs(th) (Max) @ Id 4V @ 1mA
Series U-MOSVIII-H	Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) ±20V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 100 V
FET Type N-Channel	Power Dissipation (Max) 800mW (Ta), 142W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature 150°C
Drain to Source Voltage (Vdss) 200 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 33A (Tc)	Supplier Device Package 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case 8-PowerVDFN