Name: TPN1R603PL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPN1R603PLL1QTR-ND
Price: 275 JPY
Availability: InStock

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TPN1R603PL,L1Q
DigiKey Part Number	TPN1R603PLL1QTR-ND - Tape & Reel (TR) TPN1R603PLL1QCT-ND - Cut Tape (CT) TPN1R603PLL1QDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPN1R603PL,L1Q
Description	MOSFET N-CH 30V 80A 8TSON
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 30 V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Datasheet	Datasheet
EDA/CAD Models	TPN1R603PL,L1Q Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.1V @ 300µA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Series U-MOSIX-H	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 15 V
Part Status Active	Power Dissipation (Max) 104W (Tc)
FET Type N-Channel	Operating Temperature 175°C
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 30 V	Supplier Device Package 8-TSON Advance (3.1x3.1)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)	Package / Case 8-PowerVDFN
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number TPN1R603
Rds On (Max) @ Id, Vgs 1.6mOhm @ 40A, 10V