Name: TK100E10N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK100E10N1S1X-ND
Price: 1129.7 JPY
Availability: InStock

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TK100E10N1,S1X
DigiKey Part Number	TK100E10N1S1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK100E10N1,S1X
Description	MOSFET N-CH 100V 100A TO220
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 100A (Ta) 255W (Tc) Through Hole TO-220
Datasheet	Datasheet
EDA/CAD Models	TK100E10N1,S1X Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 1mA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Series U-MOSVIII-H	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 50 V
Part Status Active	Power Dissipation (Max) 255W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 100 V	Supplier Device Package TO-220
Current - Continuous Drain (Id) @ 25°C 100A (Ta)	Package / Case TO-220-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number TK100E10
Rds On (Max) @ Id, Vgs 3.4mOhm @ 50A, 10V