TO-220-3
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TK100E06N1,S1X

DigiKey Part Number
TK100E06N1S1X-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK100E06N1,S1X
Description
MOSFET N CH 60V 100A TO-220
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 60 V 100A (Ta) 255W (Tc) Through Hole TO-220
Datasheet
 Datasheet
EDA/CAD Models
TK100E06N1,S1X Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSVIII-H
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10500 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
255W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
TK100E06
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In-Stock: 30
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Quantity
All prices are in JPY
Tube
QuantityUnit PriceExt Price
1¥631.00000¥631
50¥322.10000¥16,105
100¥292.12000¥29,212
500¥239.56200¥119,781
1,000¥222.68300¥222,683
2,000¥221.65350¥443,307
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without JCT:¥631.00000
Unit Price with JCT:¥694.10000